RJK5014DPK View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK5014DPK Datasheet PDF : 7 Pages
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RJK5014DPK
Typical Capacitance vs.
Drain to Source Voltage (Typical)
10000
Ciss
1000
100
Coss
Crss
10
VGS = 0
f = 1 MHz
Ta = 25°C
1
0
50 100 150 200 250
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
40
VGS = 0 V
Ta = 25 °C
Pulse Test
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Dynamic Input Characteristics (Typical)
800
ID = 19 A
Ta = 25 °C
600
400 VDS
16
VGS
VDD = 400 V
250 V
12
100 V
8
200
0
0
VDD = 400 V
250 V
100 V
20 40 60
4
0
80 100
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
VDS = 10 V
4
3
ID = 10 mA
1 mA
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 4 of 6
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