RJK6015DPK View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK6015DPK Datasheet PDF : 7 Pages
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RJK6015DPK
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
di / dt = 100 A / µs
2
VGS = 0, Ta = 25°C
1
1 3 10 30 100 300 1000
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
800
ID = 21 A
16
VGS
VDD = 100 V
600
300 V
12
VDS
480 V
400
8
200
VDD = 480 V
4
300 V
100 V
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4
ID = 10 mA
1 mA
3
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
100000
30000
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
300
100
Coss
30
Crss
10
0
100
200
300
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
4 5 V, 10 V
VGS = 0 V, −5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
REJ03G1536-0200 Rev.2.00 Apr 18, 2007
Page 4 of 6
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