RJK5003DPD-00-J2(2010) View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK5003DPD-00-J2
(Rev.:2010)

Silicon N Channel Power MOS FET High Speed Power Switching Use

Renesas Electronics 

Preliminary Datasheet

RJK5003DPD

Silicon N Channel Power MOS FET

High Speed Power Switching Use

R07DS0049EJ0400

(Previous: REJ03G0580-0300)

Rev.4.00

Jul 22, 2010

Features

 VDSS : 500 V

 RDS(on) : 1.5  (MAX.)

 ID : 5 A

 Surface mount package (MP-3A)

Outline

RENESAS Package code: PRSS0004ZG-A

(Package name : MP-3A)

2, 4

ommesnidgn Applications

c e  Lighting ballast, SMPS, etc.

re d Maximum Ratings

ot ew Parameter

n Drain to source voltage

N Gate to source voltage

r Drain current

fo Drain Peak current

4

12 3

1

3

1. Gate

2. Drain

3. Source

4. Drain

Symbol

VDSS

VGSS

ID

ID

Note1

(pulse)

Ratings

500

30

5

20

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

Avalanche current

IAP

5

A

L = 200 H

Channel dissipation

Pch

62.5

W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Channel to case thermal impedance

ch-c

2.0

Note: 1. Pulse width limited by safe operating area.

C/W Channel to case

R07DS0049EJ0400 Rev.4.00

Jul 22, 2010

Page 1 of 6

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