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RJK5003DPD(2010) View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
RJK5003DPD
(Rev.:2010)
Renesas
Renesas Electronics Renesas
RJK5003DPD Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RJK5003DPD
Preliminary
Main Characteristics
Power vs. Temperature Derating
70
Maximum Safe Operating Area
100
60
PW
50
10
100 μs = 10 μs
40
1
DC
30
Operation in this area is
20
limited by RDS(on)
0.1
10
0
0
50
100
150
200
Tc = 25°C
Single pulse
0.01
1
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
d Typical Output Characteristics
n 10
Tc = 25°C
VGS = 20 V
e Pulse Test
10 V
8
m n PDS = 62.5 W
7V
6V
m ig 6
5V
s 4
eco de 2
r4V
t w 0
0
4
8
12 16 20
o e Drain to Source Voltage VDS (V)
N r n Drain to Source Saturation Voltage vs.
fo Gate to Source Voltage (Typical)
Typical Output Characteristics
5
VGS = 20 V
7V
10 V
5V
4
6V
3
Tc = 25°C
Pulse Test
2
1
4V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance vs.
Drain Current (Typical)
20
4
Tc = 25°C
Tc = 25°C
Pulse Test
Pulse Test
16
3.2
ID = 8 A
12
2.4
VGS = 10 V
8
1.6
5A
20 V
4
3A
0.8
0
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
0
10–1
100
101
102
Drain Current ID (A)
R07DS0049EJ0400 Rev.4.00
Jul 22, 2010
Page 3 of 6

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