RJK5003DPD-00-J2(2010) View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK5003DPD-00-J2
(Rev.:2010)
(Rev.:2010)
Renesas Electronics
RJK5003DPD-00-J2 Datasheet PDF : 7 Pages
| |||
RJK5003DPD
Preliminary
Transfer Characteristics (Typical)
10
Tc = 25°C
VDS = 10 V
8 Pulse Test
6
4
2
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Capacitance vs.
Drain to Source Voltage (Typical)
103
Ciss
102
101
Tch = 25°C
f = 1 MHz
100 VGS = 0 V
100
101
Coss
Crss
102
103
Drain to Source Voltage VDS (V)
Switching Characteristics (Typical)
d 103
7
n 5
Tch = 25°C
VDD = 200 V
VGS = 10 V
e 3
RG = 25 Ω
2
Pulse Test
mm ign 102
7
5
o s 3
c e 2
t re w d 101100
td(off)
tf
td(on)
tr
2
3
5 7 101
Drain Current ID (A)
o e Reverse Drain Current vs.
n Source to Drain Voltage Characteristics
N(Typical)
r 10
o VGS = 0 V
f Pulse Test
Gate to Source Voltage vs.
Gate Charge (Typical)
16
Tch = 25°C
ID = 5 A
VDS = 100 V
12
200 V
8
400 V
4
0
0 4 8 12 16 20 24
Gate Charge Qg (nC)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0 V
ID = 1 mA
8 Ta = 25°C
1.2
6
1.0
4
0.8
2
0
0 0.4 0.8 1.2 1.6 2
Source to Drain Voltage VSD (V)
0.6
0.4
–75 –25 25
75 125 175
Channel Temperature Tch (°C)
R07DS0049EJ0400 Rev.4.00
Jul 22, 2010
Page 4 of 6
Share Link: