RJK5003DPD View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK5003DPD Datasheet PDF : 7 Pages
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RJK5003DPD
Silicon N Channel Power MOS FET
High Speed Power Switching Use
Features
• VDSS : 500 V
• RDS(on) : 1.5 Ω (MAX.)
• ID : 5 A
• Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name : MP-3A)
2, 4
4
1
12 3
3
REJ03G0580-0200
Rev.2.00
Mar 14, 2006
1. Gate
2. Drain
3. Source
4. Drain
Applications
• Lighting ballast, SMPS, etc.
Maximum Ratings
Parameter
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain Peak current
Avalanche current
VDSS
VGSS
ID
ID
Note1
(pulse)
IAP
Channel dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Channel to case thermal impedance
θch-c
Note: 1. Pulse width limited by safe operating area.
Ratings
500
±30
5
20
5
62.5
150
–55 to +150
2.0
Unit
V
V
A
A
A
W
°C
°C
°C/W
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 200 µH
Channel to case
Rev.2.00, Mar 14, 2006, page 1 of 6
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