RJK5003DPD-00-J2 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK5003DPD-00-J2

Silicon N Channel Power MOS FET High Speed Power Switching Use

Renesas Electronics 

RJK5003DPD

Electrical Characteristics

Parameter

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state

resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Body-drain diode forward voltage

Note: 2. Pulse test

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDF

Min.

500

—

—

3.0

—

—

—

—

—

—

—

—

—

Typ.

—

—

—

3.5

1.3

550

60

10

20

20

60

25

1.0

Max.

—

1

±0.1

4.0

1.5

—

—

—

—

—

—

—

1.5

Unit

V

mA

µA

V

Ω

(Tch = 25°C)

Test conditions

ID = 1 mA, VGS = 0 V

VDS = 500 V, VGS = 0 V

VGS = ±25 V, VDS = 0 V

ID = 1 mA, VDS = 10 V

ID= 2 A, VGS = 10 VNote2

pF VDS = 25 V, VGS= 0 V,

pF f = 1 MHz

pF

ns VDD = 200 V, ID = 2 A,

ns VGS = 10 V

ns RG = 25 Ω

ns

V

IF = 2 A, VGS = 0 V Note2

Rev.2.00, Mar 14, 2006, page 2 of 6

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