RJK6022DJE View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK6022DJE

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6022DJE

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit

Test conditions

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state

resistance

V(BR)DSS

600

—

—

V ID = 10 mA, VGS = 0

IDSS

—

—

1

µA VDS = 600 V, VGS = 0

IGSS

—

—

±0.1 µA VGS = ±30 V, VDS = 0

VGS(off)

3

—

5

V VDS = 10 V, ID = 1 mA

RDS(on)

—

13

15

Ω ID = 0.1 A, VGS = 10 V Note2

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

—

84

—

pF VDS = 25 V

Coss

—

11

—

pF VGS = 0

Crss

—

2

—

pF f = 1 MHz

Turn-on delay time

td(on)

—

31

—

ns ID = 0.1 A

Rise time

Turn-off delay time

Fall time

tr

—

14

—

ns VGS = 10 V

td(off)

—

53

—

ns RL = 3000 Ω

tf

—

173

—

ns Rg = 10 Ω

Total gate charge

Qg

—

4.5

—

nC VDD = 480 V

Gate to source charge

Qgs

—

0.6

—

nC VGS = 10 V

Gate to drain charge

Qgd

—

2.6

—

nC ID = 0.2 A

Body-drain diode forward voltage

VDF

—

0.77

1.25

V IF = 0.2 A, VGS = 0 Note2

Body-drain diode reverse recovery time

trr

—

150

—

ns IF = 0.2 A, VGS = 0

diF/dt = 100 A/µs

Notes: 2. Pulse test

3. Since this device is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied.

Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.

Rev.6.00 Nov 10, 2006 page 2 of 6

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