RJK6022DJE View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK6022DJE Datasheet PDF : 9 Pages
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RJK6022DJE
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
2
1
0.1 0.3
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
800
VDD = 100 V
300 V
480 V
600
VDS
VGS
400
16
ID = 0.2 A
12
8
200
VDD = 480 V
4
300 V
100 V
0
0
2
4
6
8
10
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25 0
VDS = 10 V
25 50 75 100 125 150
Case Temperature Tc (°C)
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
30
10
Coss
3
Crss
1
0.3
0.1
0
100
200
300
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
Pulse Test
0.8
0.6
0.4
0.2
5, 10 V
VGS = 0, -5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Rev.6.00 Nov 10, 2006 page 4 of 6
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