RJK6026DPP View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK6026DPP

Silicon N Channel MOS FET

Renesas Electronics 

RJK6026DPP

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit

Test conditions

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state

resistance

V(BR)DSS

600

—

—

V ID = 10 mA, VGS = 0

IDSS

—

—

1

µA VDS = 600 V, VGS = 0

IGSS

—

—

±0.1 µA VGS = ±30 V, VDS = 0

VGS(off)

3.0

—

4.5

V VDS = 10 V, ID = 1 mA

RDS(on)

—

2.0

2.4

Ω ID = 2.5 A, VGS = 10 V Note5

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

—

440

—

pF VDS = 25 V

Coss

—

45

—

pF VGS = 0

Crss

—

6

—

pF f = 1 MHz

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td(on)

—

26

—

ns ID = 2.5 A

tr

—

18

—

ns VGS = 10 V

td(off)

—

53

—

ns RL = 120 Ω

tf

—

14

—

ns Rg = 10 Ω

Total gate charge

Gate to source charge

Gate to drain charge

Qg

—

14

—

nC VDD = 480 V

Qgs

—

3

—

nC VGS = 10 V

Qgd

—

7

—

nC ID = 5 A

Body-drain diode forward voltage

VDF

—

0.9

1.5

V IF = 5 A, VGS = 0 Note5

Body-drain diode reverse recovery time

trr

—

250

—

ns IF = 5 A, VGS = 0

diF/dt = 100 A/µs

Notes: 5. Pulse test

REJ03G1592-0200 Rev.2.00 Jun 04, 2008

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