RJK5020DPK
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
500
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
3.0
Static drain to source on state
resistance
RDS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
VDF
—
Body-drain diode reverse recovery time
trr
—
Notes: 4. Pulse test
Typ
—
—
—
—
0.102
Max
—
1
±0.1
4.5
0.118
Unit
V
µA
µA
V
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VGS = 10 V Note4
5150
525
55
52
115
180
125
126
26
54
0.90
450
—
—
—
—
—
—
—
—
—
—
1.50
—
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 20 A
ns VGS = 10 V
ns RL = 12.5 Ω
ns Rg = 10 Ω
nC VDD = 400 V
nC VGS = 10 V
nC ID = 40 A
V IF = 40 A, VGS = 0 Note4
ns IF = 40 A, VGS = 0
diF/dt = 100 A/µs
Rev.2.00 Dec 19, 2006 page 2 of 6