RJK5020DPK View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK5020DPK Datasheet PDF : 7 Pages
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RJK5020DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
G
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheet
REJ03G1263-0300
Rev.3.00
Jun 30, 2010
D
1. Gate
2. Drain (Flange)
3. Source
S
Ratings
500
±30
40
120
40
120
12.5
8.6
200
0.625
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1263-0300 Rev.3.00
Jun 30, 2010
Page 1 of 6
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