RJK5020DPK View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK5020DPK Datasheet PDF : 7 Pages
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RJK5020DPK
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
di / dt = 100 A / μs
2
VGS = 0, Ta = 25°C
1
1 3 10 30 100 300 1000
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
800
ID = 40 A
16
VGS
VDD = 100 V
600
250 V
12
400 V
VDS
400
8
200
VDD = 400 V
4
250 V
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4
ID = 10 mA
1 mA
3
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
100000
30000
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
300
Coss
100
30
Crss
10
0
100
200
300
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
5, 10 V
10
VGS = 0, -5 V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
REJ03G1263-0300 Rev.3.00
Jun 30, 2010
Page 4 of 6
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