RJK6002DPD View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK6002DPD

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6002DPD

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

600

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

3.0

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Notes: 4. Pulse test

Typ

—

—

—

—

5.7

165

20

2.5

28

17

47

20

6.2

1.1

3.6

0.87

260

Max

—

1

±0.1

4.5

6.8

Unit

V

µA

µA

V

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 600 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 1 A, VGS = 10 V Note4

—

—

—

—

—

—

—

—

—

—

1.45

—

pF VDS = 25 V

pF VGS = 0

pF f = 1 MHz

ns ID = 1 A

ns VGS = 10 V

ns RL = 300 Ω

ns Rg = 10 Ω

nC VDD = 480 V

nC VGS = 10 V

nC ID = 2 A

V IF = 2 A, VGS = 0 Note4

ns IF = 2 A, VGS = 0

diF/dt = 100 A/µs

Rev.1.00 Nov 09, 2006 page 2 of 3

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