RJK6012DPP(2007) View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK6012DPP
(Rev.:2007)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6012DPP

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

G

1

23

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

Drain current

Drain peak current

VGSS

ID Note4

ID

Note1

(pulse)

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

IDR

IDR (pulse) Note1

IAP Note3

EAR Note3

Pch Note2

Channel to case thermal impedance

θch-c

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

4. Limited by maximum safe operation area

REJ03G1581-0100

Rev.1.00

Sep 06, 2007

D

1. Gate

2. Drain

3. Source

S

Ratings

600

±30

10

20

10

20

3

0.49

30

4.17

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

°C/W

°C

°C

REJ03G1581-0100 Rev.1.00 Sep 06, 2007

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