RJK6025DPE(2009) View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK6025DPE
(Rev.:2009)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6025DPE

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

600

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

3

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Typ

—

—

—

—

13.0

71.5

10.5

1.5

31

15

44

44

5.0

0.7

3.3

0.86

157

Max Unit

—

V

1

μA

±0.1 μA

5

V

17.5 Ω

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

nC

—

nC

—

nC

1.45 V

—

ns

Notes: 3. Pulse test

4. This device is sensitive to electrostatic discharge.

It is recommended to adopt appropriate cautions when handling this product.

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 600 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID =0.4 A, VGS = 10 V Note3

VDS = 25 V

VGS = 0

f = 1 MHz

ID = 0.4 A

VGS = 10 V

RL = 750 Ω

Rg = 10 Ω

VDD = 480 V

VGS = 10 V

ID = 0.8 A

IF = 0.8 A, VGS = 0 Note3

IF = 0.8 A, VGS = 0

diF/dt = 100 A/μs

REJ03G1870-0100 Rev.1.00 Dec 08, 2009

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