RJK6024DPD(2010) View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK6024DPD Datasheet PDF : 7 Pages
| |||
RJK6024DPD
Main Characteristics
Maximum Safe Operation Area
10
1
PW 10 μs
0.1
= 100 μs
0.01
0.001
Operation in this
area is limited by
RDS(on)
Tc = 25°C
1 shot
0.0001
0.1
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1
VDS = 10 V
Pulse Test
Tc = −25°C
25°C 75°C
0.1
Preliminary
Typical Output Characteristics
0.6
Ta = 25°C
Pulse Test
0.5
5.8 V
6V
8V
0.4
10 V
5.6 V
0.3
5.4 V
0.2
5.2 V
0.1
VGS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1000
VGS = 10 V
Ta = 25°C
Pulse Test
100
0.01
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
80
VGS = 10 V
Pulse Test
60
ID = 0.4 A
40
0.2 A
0.1 A
20
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1936-0100 Rev.1.00
Jun 01, 2010
10
0.01
0.1
1
Drain Current ID (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1
10
Reverse Drain Current IDR (A)
Page 3 of 6
Share Link: 