RJK6002DPH-E0T2 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
RJK6002DPH-E0T2 Datasheet PDF : 7 Pages
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RJK6002DPH-E0
Main Characteristics
Maximum Safe Operation Area
100
Ta = 25°C
1 shot
10
1
PW
10 μs
= 100 μs
0.1
0.01
0.001
0.1
Operation in this
area is limited by
RDS(on)
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1
VDS = 10 V
Pulse Test
0.1
Tc = 75°C
0.01
25°C
0.001
−25°C
0.0001
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
16
Pulse Test
VGS = 10 V
12
ID = 2 A
8
0.5 A
1A
4
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS1047EJ0100 Rev.1.00
Mar 21, 2013
Preliminary
Typical Output Characteristics
5
Pulse Test
Ta = 25°C
4
3
5.8 V
5.6 V
8 V, 10 V 6 V
2
5.4 V
1
5.2 V
VGS = 5 V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
100
Pulse Test
VGS = 10 V
Ta = 25°C
10
1
0.1
1
10
Drain Current ID (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
1
10
Reverse Drain Current IDR (A)
Page 3 of 6
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