RMPA2259 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
RMPA2259 Datasheet PDF : 11 Pages
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Absolute Ratings 1
Symbol
VCC1, VCC2
Vref
Vmode
PIN
TSTG
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Ratings
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Units
V
V
V
dBm
°C
Electrical Characteristics1
Symbol
Parameter
f
Operating Frequency
WCDMA Operation
Gp Power Gain
Po Linear Output Power
PAEd
Itot
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Leakage Ratio
ACLR1 ±5.0MHz Offset
ACLR2 ±10.0MHz Offset
General Characteristics
VSWR Input Impedance
NF Noise Figure
Rx No Receive Band Noise Power
2fo-5fo
S
Harmonic Suppression3
Spurious Outputs2,3
Ruggedness w/ Load Mismatch3
Tc
Case Operating Temperature
DC Characteristics
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
Min
1920
28
16
-30
Typ
26.5
24
40
9
20
450
130
-40
-43
-53
-66
2.0:1
3
-139
50
5
1
Max Units
1980 MHz
Comments
dB
dB
dBm
dBm
%
%
%
mA
mA
dBc
dBc
dBc
dBc
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode≥2.0V
Vmode=0V
Vmode≥2.0V
Vmode=0V
Vmode≥2.0V
Vmode≥2.0V, Vcc=1.4V
Po=+28dBm, Vmode=0V
Po=+16dBm, Vmode≥2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode≥2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode≥2.0V
dB
dBm/Hz Po≤+28dBm;
2110 to 2170MHz
-30
dBc Po≤+28dBm
-60
dBc Load VSWR ≤ 5.0:1
10:1
No permanent damage
85
°C
mA Vmode≥2.0V
8
mA Po≤+28dBm
5
µA No applied RF signal
Notes:
1: All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1950MHz, and load VSWR ≤ 1.2:1.
2: All phase angles.
3: Guaranteed by design.
©2005 Fairchild Semiconductor Corporation
2
RMPA2259 Rev. E
www.fairchildsemi.com
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