RQA0001DNSTR View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RQA0001DNSTR

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0001DNS

Evaluation Circuit (f = 520 MHz)

C5

C4

VG

R2

C3

R1

50 Ω C1

L2

IN

C2

C10 C11

VD

C9

L1

L3

C6

C8 50 Ω

OUT

C7

C1, C8: 68 pF Chip Capacitor

C2:

15 pF Chip Capacitor

C3, C9: 100 pF Chip Capacitor

C4, C10: 1000 pF Chip Capacitor

C5, C11 : 2.2 µF Electrolysis Capacitor

C6:

4 pF Chip Capacitor

C7:

12 pF Chip Capacitor

L1:

8 Turns D: 0.5 mm, φ 2.4 mm Enamel Wire

L2:

4.7 nH Chip Inductor

L3:

3.6 nH Chip Inductor

R1:

33 Ω Chip Resistor

R2:

2.7 kΩ Chip Resistor

Rev.3.00 Oct 11, 2006 page 4 of 12

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