RTF015N03TL View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

RTF015N03TL

Nch 30V 1.5A Middle Power MOSFET

ROHM Semiconductor 

RTF015N03

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lThermal resistance

　 　 　　　　　　　　　　　　　　　　

Parameter

Symbol

Values

Unit

Min. Typ. Max.

RthJA*2

-

- 156 ℃/W

Thermal resistance, junction - ambient

RthJA*3

r lElectrical characteristics (Ta = 25°C)

fo Parameter

Symbol

Conditions

Drain - Source breakdown

d voltage

V(BR)DSS VGS = 0V, ID = 1mA

e Breakdown voltage

d temperature coefficient

　ΔV(BR)DSS　 ID = 1mA

　　 ΔTj 　 　 referenced to 25℃

n s Zero gate voltage

drain current

IDSS VDS = 30V, VGS = 0V

e n Gate - Source leakage current IGSS VGS = 12V, VDS = 0V

m ig Gate threshold voltage

Gate threshold voltage

s temperature coefficient

VGS(th) VDS = 10V, ID = 1mA

　ΔVGS(th) 　 ID = 1mA

　　 ΔTj 　 　 referenced to 25℃

om e Static drain - source

c D on - state resistance

VGS = 4.5V, ID = 1.5A

RDS(on)*4 VGS = 4.0V, ID = 1.5A

VGS = 2.5V, ID = 1.5A

e Gate resistance

RG f = 1MHz, open drain

w Forward Transfer

R e Admittance

|Yfs|*4 VDS = 10V, ID = 1.5A

-

- 167 ℃/W

Values

Unit

Min. Typ. Max.

30 -

-

V

-

29

- mV/℃

-

-

1 μA

-

- 10 μA

0.5 - 1.5 V

- -1.6 - mV/℃

- 170 240

- 180 250 mΩ

- 240 340

-

17 -

Ω

1.5 -

-

S

ot N *1 Pw≦10μs , Duty cycle≦1%

N*2 Mounted on a ceramic board (30x30x0.8mm)

*3 Mounted on a FR4 (25x25x0.8mm)

*4 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　

www.rohm.com

© 2015 ROHM Co., Ltd. All rights reserved.

2/11

　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

20151109 - Rev.001

Share Link: