S29AL016M10BAI012 View Datasheet(PDF) - Spansion Inc.

Part Name

Description

Manufacturer

S29AL016M10BAI012

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) 3.0 Volt-only Boot Sector Flash Memory featuring MirrorBit™ technology

Spansion Inc. 

The internal state machine is set for reading array data upon device power-up,

or after a hardware reset. This ensures that no spurious alteration of the mem-

ory content occurs during the power transition. No command is necessary in

this mode to obtain array data. Standard microprocessor read cycles that as-

sert valid addresses on the device address inputs produce valid data on the

device data outputs. The device remains enabled for read access until the com-

mand register contents are altered.

See “Reading Array Data” for more information. Refer to the AC Read Operations

table for timing specifications and to Figure 13 for the timing diagram. ICC1 in the

DC Characteristics table represents the active current specification for reading

array data.

Writing Commands/Command Sequences

To write a command or command sequence (which includes programming data

to the device and erasing sectors of memory), the system must drive WE# and

CE# to VIL, and OE# to VIH.

For program operations, the BYTE# pin determines whether the device accepts

program data in bytes or words. Refer to “Word Configuration” for more

information.

The device features an Unlock Bypass mode to facilitate faster programming.

Once the device enters the Unlock Bypass mode, only two write cycles are re-

quired to program a word or byte, instead of four. The “Word Program Command

Sequence” section has details on programming data to the device using both

standard and Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sectors, or the entire device.

Tables 2 and 3 indicate the address space that each sector occupies. A “sector

address” consists of the address bits required to uniquely select a sector. The

“Command Definitions” section has details on erasing a sector or the entire chip,

or suspending/resuming the erase operation.

After the system writes the autoselect command sequence, the device enters the

autoselect mode. The system can then read autoselect codes from the internal

register (which is separate from the memory array) on DQ7–DQ0. Standard read

cycle timings apply in this mode. Refer to the “Autoselect Mode” and “Autoselect

Command Sequence” sections for more information.

ICC2 in the DC Characteristics table represents the active current specification for

the write mode. The “AC Characteristics” section contains timing specification ta-

bles and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may check the status of the

operation by reading the status bits on DQ7–DQ0. Standard read cycle timings

and ICC read specifications apply. Refer to “Write Operation Status” for more in-

formation, and to “AC Characteristics” for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it can place the device

in the standby mode. In this mode, current consumption is greatly reduced, and

the outputs are placed in the high impedance state, independent of the OE#

input.

April 21, 2004 S29AL016M_00A4

S29AL016M

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