S3C8278 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

S3C8278

8-BIT CMOS MICROCONTROLLERS

Samsung 

REVISION DESCRIPTIONS

1. ELECTRICAL DATA

Table 17-12. A.C. Electrical Characteristics for Internal Flash ROM

(TA = – 25 °C to + 85 °C, VDD = 2.0 V to 3.6 V)

Parameter

Symbol

Conditions

Programming time (1)

Ftp

–

Chip erasing time (2)

Ftp1

–

Sector erasing time (3)

Ftp2

–

Data access time

FtRS

–

Min

Typ

30

–

10

–

10

–

–

25

Number of writing/erasing

FNwe

–

–

–

Max

–

–

–

–

10,000(4)

Unit

µs

ms

ms

ns

Times

NOTES:

1. The programming time is the time during which one byte (8-bit) is programmed.

2. The chip erasing time is the time during which all 16K byte block is erased.

3. The sector erasing time is the time during which all 128 byte block is erased.

4. Maximum number of writing/erasing is 10,000 times for full-flash(S3F8275) and 100 times for half-flash

(S3F8278/F8274).

5. The chip erasing is available in Tool Program Mode o nly.

2. CONDITION OF OPERATING VOLTAGE

Condition of operating voltage is modified “fx = 0 – 4.2MHz” to “fx = 0.4 – 4.2MHz” at 2.0V – 3.6V and “fx = 0–8MHz”

to “fx = 0.4 – 8MHz” at 2.5V – 3.6V in the page 17-2.

3. CHAPTHER 16. EMBEDDED FLASH MEMORY INTERFACE

This chapter is modified for only S3F8275.

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