S3C8285 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

S3C8285

8-BIT CMOS MICROCONTROLLERS

Samsung 

REVISION DESCRIPTIONS

1. CHAPTHER 20 ELECTRICAL DATA

Table 20-15. Internal Flash ROM Electrical Characteristics (page 20-15)

(TA = –25 °C to + 85 °C, VDD = 2.0 V to 3.6 V)

Parameter

Symbol

Conditions

Programming Time (1)

Ftp

–

Chip Erasing Time (2)

Ftp1

Sector Erasing Time (3)

Ftp2

Data Access Time

FtRS

Number of Writing/Erasing FNWE

–

Min

Typ

Max

30

–

–

50

–

–

10

–

–

–

25

–

–

–

10,000(4)

NOTES:

1. The Programming time is the time during which one byte (8-bit) is programmed.

2. The Chip Erasing time is the time during which all 64K byte block is erased.

3. The Sector Erasing time is the time during which all 128 byte block is erased.

4. Maximum number of Writing/Erasing is 10,000 times for full-flash(S3F828B) and 100 times for half-flash

(S3F8289/F8285).

5. The Chip Erasing is available in Tool Program Mode only.

Unit

µs

ms

ms

ns

Times

Table 20-6. A/D Converter Electrical Characteristics

(TA = –25 °C to + 85 °C, VDD = 2.7 V to 3.6 V, VSS = 0 V)

Parameter

Symbol

Conditions

Analog input voltage

VIAN

–

Analog input

RAN

–

impedance

Analog reference

AVREF

–

voltage

Min

Typ

VSS

–

2

1000

2.0

–

Max

AVREF

–

VDD

Unit

V

MΩ

V

2. CHAPTHER 19. EMBEDDED FLASH MEMORY INTERFACE

This chapter is modified for only S3F828B.

3. CHAPTHER 12. 16-BIT TIMER 0/1

The Figure12-2 condition ‘Match signal’ should be moved in the page 12-3.

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