SAA7740 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

SAA7740

Digital Audio Processing IC (DAPIC)

Philips Electronics 

Philips Semiconductors

Digital Audio Processing IC (DAPIC)

Product specification

SAA7740H

DC CHARACTERISTICS

VDD = 4.5 to 5.5 V; Tamb = −40 to +85 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

VDDn

IDD(tot)

Ptot

VIH

VIL

Vth(pos)

Vth(neg)

Vhys

VOH

VOL

ILI

IZO

Rpd

tr(i)

tf(i)

tr(o)

tf(o)

DC supply voltage (pins 7, 8,

4.5

26, 32, 38, 53, 54 and 60)

total of all DC supply current fxtal = 16.9344 MHz

−

pins

total power dissipation

HIGH level input voltage

(pins 1, 3, 4, 11, 12, 15, 16,

36, 37, 41 to 45, 47 to 49, 51,

52, 62 and 64)

fxtal = 16.9344 MHz

−

0.7VDD

LOW level input voltage

−

(pins 1, 3, 4, 11, 12, 15, 16,

36, 37, 41 to 45, 47 to 49, 51,

52, 62 and 64)

Schmitt trigger positive-going

−

threshold (pin 2)

Schmitt trigger negative-going

threshold (pin 2)

0.2VDD

hysteresis voltage (pin 2)

−

HIGH level output voltage

VDD = 4.5 V; IO = 4 mA

4.0

(pins 10 to 12, 14 to 24, 27 to

31, 33 to 35 and 63)

LOW level output voltage

VDD = 4.5 V; IO = 4 mA

−

(pins 3, 10 to 12, 14 to 24, 27

to 31, 33 to 35 and 63)

input leakage current

VDD = 0 or 5.5 V

−

(pins 1, 2, 4, 36, 37, 41 to 45,

47 to 49, 51, 52 and 62)

output leakage current; 3-state VDD = 0 or 5.5 V

−

(pins 3, 11, 12, 15 and 16)

internal pull-down resistance

to VSS (pin 64)

input rise time

input fall time

output rise time for

LOW-to-HIGH transition

VI = VDD

17

VDD = 5.5 V

−

VDD = 5.5 V

−

VDD = 4.5 V; Tamb = 85 °C;

−

CL = pF; pins 11, 12, 15 and 16

VDD = 4.5 V; Tamb = 85 °C;

−

CL = pF; pins 10, 14, 17 to 24,

27 to 31, 33 to 35 and 63

output fall time for

HIGH-to-LOW transition

VDD = 4.5 V; Tamb = 85 °C;

−

CL = pF; pins 11, 12, 15 and 16

VDD = 4.5 V; Tamb = 85 °C;

−

CL = pF; pins 10, 14, 17 to 24,

27 to 31, 33 to 35 and 63

TYP.

5.0

MAX.

5.5

UNIT

V

60

−

mA

300

−

mW

−

−

V

−

0.3VDD

V

−

0.8VDD

V

−

−

V

0.33VDD −

V

−

−

V

−

0.5

V

−

±1

µA

−

±5

µA

−

134

kΩ

6

200

ns

6

200

ns

−

9.5 + 0.4CL ns

−

8.5 + 0.4CL ns

−

11 + 0.5CL ns

−

9.0 + 0.5CL ns

1997 May 30

16

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