SC1480EVB View Datasheet(PDF) - Semtech Corporation

Part Name

Description

Manufacturer

SC1480EVB

DDR Memory Power Supply Controller

Semtech Corporation 

SC1480

POWER MANAGEMENT

Electrical Characteristics Cont.

Test Conditions: VIN = 2.5V, REFIN = 1.25, VCCA = VDDP = 5.0V, VOUT = 1.25V, RTON = 1M (300kHz), 0.1% Resistor Dividers

Parameter

Conditions

25°C

-40°C to 125°C Units

Min Typ Max Min Max

PGOOD Fault Delay

FB forced outside PGOOD

2.0

µs

window.

VCCA Under Voltage Threshold Rising Edge Hysteresis 100mv

4.0

3.7

4.3

V

VDDP Under Voltage Threshold

3.3

3.0 3.75 V

VDDP Under Voltage Hysteresis

250

mV

Over Temperature Lockout

10°C Hysteresis

165

C

Soft Start

Soft-Start Ramp Time

REFIN high to full current limit.

1.6

ms

Under-Voltage Blank Time

SMPS Turn-On

2

ms

Gate Drivers

Dead Time

DH or DL rising

30

ns

DL Pull-Down Resistance

DL low

0.8

1.6

Ω

DL Pull-Up Resistance

DL high

2

4

Ω

DH Pull-Down Resistance

DH low, BST - LX = 5V

2

4

Ω

DH Pull-Up Resistance

DH high, BST - LX = 5V

2

4

Ω

DL Sink Current

DL - PGND = 2.5V

2

A

DL Source Current

VDDP - DL = 2.5V

1

A

DH Sink Current

DH - LX = 2.5V, BST - LX = 5V

1

A

DH Source Current

BST - DH = 2.5V,

1

A

BST - LX = 5V

Notes:

(1) When the inductor is in continuous conduction mode, the output voltage will have a DC regulation level higher

than the error-comparator threshold by 50% of the ripple voltage.

(2) Using a current sense resistor, this measurement relates to PGND minus the voltage of the source on the

low-side MOSFET.

(3) This device is ESD sensitive. Use of ESD handling precautions is required.

(4) Measured in accordance with JESD51-1, JESD51-2 and JESD51-7.

 2006 Semtech Corp.

4

www.semtech.com

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