SD1414 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
SD1414 Datasheet PDF : 1 Pages
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SD1414
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1414 is Designed for
FM Land Mobile Applications up to 836 MHz.
FEATURES:
• Internal Input Matching Network
• PG = 5.0 dB at 45 W/836 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
9.0 A
VCBO
36 V
VCEO
18 V
VCES
36 V
VEBO
4.0 V
PDISS
150 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.2 °C/W
PACKAGE STYLE .230 6L FLG
.040x45° C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2 X Ø .1 30
L
JK
DIM
MINIMUM
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
IC = 1.0 A
COB
VCB = 12.5 V
f = 1.0 MHz
PG
ηC
VCE = 12.5 V
POUT = 45 W
f = 836 MHz
MINIMUM TYPICAL MAXIMUM
36
18
4.0
5.0
5.0
200
80
4.7
35
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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