SD1444 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
Manufacturer
SD1444 Datasheet PDF : 1 Pages
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SD1444
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The ASI SD1444 is
designed for large signal power
amplifier applications operating in the
250-512 MHz range.
FEATURES:
• Common Emitter
• POUT = 4.0 Watts
• 12.5 Volts
MAXIMUM RATINGS:
IC
VCB
VCE
PDISS
TJ
TSTG
θJC
0.4 A
36 V
16 V
5.0 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
35.0 °C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
BVEBO
IC = 1.0 mA
ICBO
VCE = 15 V
HFE
VCE = 5.0 V
IC = 50 mA
MINIMUM
16
36
4.0
20
COB
VCB = 15.0 V
f = 1.0 MHz
TRANS1.SYM
TYPICAL MAXIMUM
1.0
200
15
GPE
VCE = 12.5 V POUT = 2.0 W f = 470 MHz
8.0
15
UNITS
V
V
V
mA
---
pF
dB
IMPEDANCE DATA
FREQ
470 MHz
POUT = 2.0 W
VCC = 12.5 V
ZIN(Ω)
2.9 + j0.6
ZCL(Ω)
15.6 – j10.2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. -
1/1
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