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Part Name
Description
SEMB9(2004) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SEMB9
(Rev.:2004)
PNP Silicon Digital Transistor
Infineon Technologies
SEMB9 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
BCR185.../SEMB9
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR185
T
S
≤
102°C
BCR185F,
T
S
≤
128°C
BCR185L3,
T
S
≤
135°C
BCR185S,
T
S
≤
115°C
BCR185T,
T
S
≤
109°C
BCR185U,
T
S
≤
118°C
BCR185W,
T
S
≤
124°C
SEMB9,
T
S
≤
75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR185
BCR185F
BCR185L3
BCR185S
BCR185T
BCR185U
BCR185W
SEMB9
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
50
50
6
20
100
200
250
250
250
250
250
250
250
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
140
≤
165
≤
133
≤
105
≤
300
1For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2
Jun-14-2004
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