SFI9634 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

SFI9634

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

SFW/I9634

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

Low RDS(ON) : 0.876 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25oC)

Continuous Drain Current (TC=100oC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TA=25oC) *

Total Power Dissipation (TC=25oC)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

BVDSS = -250 V

RDS(on) = 1.3Ω

ID = -5.0 A

D2-PAK I2-PAK

2

1

1

2

3

3

1. Gate 2. Drain 3. Source

Value

-250

-5.0

-3.3

-20

+_ 30

313

-5.0

7.0

-4.8

3.1

70

0.56

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W

W/oC

oC

Thermal Resistance

Symbol

Characteristic

Typ.

RθJC

RθJA

RθJA

Junction-to-Case

--

Junction-to-Ambient *

--

Junction-to-Ambient

--

* When mounted on the minimum pad size recommended (PCB Mount).

Max.

1.79

40

62.5

Units

oC/W

Rev. B

©1999 Fairchild Semiconductor Corporation

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