SFI9634 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SFI9634 Datasheet PDF : 7 Pages
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SFW/I9634
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-250 -- -- V
-- -0.22 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 1.3 Ω
-- 3.6 -- Ω
-- 750 975
-- 110 165 pF
-- 45 65
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-250V
VDS=-200V,TC=125oC
VGS=-10V,ID=-2.5A O4
VDS=-40V,ID=-2.5A O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 13 35
-- 20 50
VDD=-125V,ID=-5.0A,
-- 40 90 ns RG=12 Ω
-- 16 40
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “ ) Charge
-- 29 37
-- 5.4 --
-- 15.5 --
VDS=-200V,VGS=-10V,
nC ID=-5.0A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -5.0
Integral reverse pn-diode
A
-- -20
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-5.0A,VGS=0V
-- 170 -- ns TJ=25oC,IF=-5.0A
-- 1.17 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=20mH, IAS=-5.0A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O <_ <_ <_ 3 ISD -5.0A, di/dt 400A/µs, VDD BVDSS , Starting TJ =25oC
O <_ 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle 2%
O5 Essentially Independent of Operating Temperature
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