DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SI3212 View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
Manufacturer
SI3212 Datasheet PDF : 130 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Si3210/Si3211
Table 2. Recommended Operating Conditions
Parameter
Symbol Test Condition Min*
Typ
Max* Unit
Ambient Temperature
Ambient Temperature
Si3210/11 Supply Voltage
Si3201 Supply Voltage
Si3201 Battery Voltage
TA
K-grade
0
25
70
°C
TA
B-grade
–40
25
85
°C
VDDD,VDDA1
,VDDA2
3.13
3.3/5.0
5.25
V
VDD
3.13
3.3/5.0
5.25
V
VBAT
VBATH = VBAT
–96
–10
V
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 oC unless otherwise stated.
Product specifications are only guaranteed when the typical application circuit (including component tolerances) is
used.
Table 3. AC Characteristics
(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Test Condition
Min
Overload Level
Single Frequency Distortion1
Signal-to-(Noise + Distortion) Ratio2
Audio Tone Generator
Signal-to-Distortion Ratio2
Intermodulation Distortion
Gain Accuracy2
Gain Accuracy Over Frequency
Group Delay Over Frequency
Gain Tracking3
Round-Trip Group Delay
Gain Step Accuracy
TX/RX Performance
THD = 1.5%
2.5
2-wire – PCM or
PCM – 2-wire:
200 Hz–3.4 kHz
200 Hz to 3.4 kHz
D/A or A/D 8-bit
Active off-hook, and OHT,
any ZAC
Figure 1
0 dBm0, Active off-hook,
45
and OHT, any Zac
2-wire to PCM, 1014 Hz
–0.5
PCM to 2-wire, 1014 Hz
–0.5
Figure 3,4
Figure 5,6
1014 Hz sine wave, refer-
ence level –10 dBm
signal level:
3 to –37 dB
–0.25
–37 to –50 dB
–0.5
–50 to –60 dB
–1.0
at 1000 Hz
–6 to +6 dB
–0.017
Typ
0
0
1100
Max
Unit
VPK
–45
dB
dB
–45
dB
0.5
dB
0.5
dB
0.25
dB
0.5
dB
1.0
dB
µs
0.017
dB
Rev. 1.43
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]