SI3211-E-FM View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

SI3211-E-FM

PROSLIC® PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION

Silicon Laboratories 

Si3210/Si3211

Table 4. Linefeed Characteristics

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for F-Grade, –40 to 85°C for G-Grade)

Parameter

Symbol

Test Condition

Min Typ Max Unit

Loop Resistance Range*

RLOOP

See *Note.

0

—

160



DC Loop Current Accuracy

ILIM = 29 mA, ETBA = 4 mA

–10

—

10

%

DC Open Circuit Voltage

Accuracy

Active Mode; VOC = 48 V,

VTIP – VRING

–4

—

4

V

DC Differential Output

Resistance

RDO

ILOOP < ILIM

—

160

—



DC Open Circuit Voltage—

Ground Start

VOCTO

IRING<ILIM; VRING wrt ground

VOC = 48 V

–4

—

4

V

DC Output Resistance—

Ground Start

RROTO

IRING<ILIM; RING to ground

—

160

—



DC Output Resistance—

Ground Start

RTOTO

TIP to ground

150

—

—

k

Loop Closure/Ring Ground

Detect Threshold Accuracy

ITHR = 11.43 mA

–20

—

20

%

Ring Trip Threshold

Accuracy

Ring Trip Response Time

Ring Amplitude

Ring DC Offset

ITHR = 40.64 mA

–10

—

User Programmable Register 70

and Indirect Register 36

—

—

VTR

5 REN load; sine wave;

RLOOP = 160 VBAT = –75 V

44

—

ROS

Programmable in Indirect

Register 19

0

—

10

%

—

—

Vrms

—

V

Trapezoidal Ring Crest

Factor Accuracy

Sinusoidal Ring Crest

Factor

RCF

Crest factor = 1.3

–.05

—

.05

1.35

—

1.45

Ringing Frequency Accuracy

Ringing Cadence Accuracy

Calibration Time

f = 20 Hz

–1

—

1

%

Accuracy of ON/OFF Times –50

—

50

ms

CAL to CAL Bit

—

—

600

ms

Power Alarm Threshold

Accuracy

At Power Threshold = 300 mW –25

—

25

%

*Note: DC resistance round trip; 160 corresponds to 2 kft, 26 gauge AWG.

10

Rev. 1.61

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