SI3211-E-FM View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

SI3211-E-FM

PROSLIC® PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION

Silicon Laboratories 

Si3210/Si3211

Table 5. Monitor ADC Characteristics

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Differential Nonlinearity

(6-bit resolution)

Integral Nonlinearity

(6-bit resolution)

Gain Error (Voltage)

DNLE

INLE

–1/2

—

–1

—

—

—

1/2

LSB

1

LSB

10

%

Gain Error (Current)

—

—

20

%

Table 6. Si321x DC Characteristics, VDDA = VDDD = 5.0 V

(VDDA,VDDD = 4.75 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

High Level Input Voltage

VIH

0.7 x VDDD —

—

V

Low Level Input Voltage

VIL

—

— 0.3 x VDDD V

High Level Output Voltage

VOH

DIO1,DIO2,SDITHRU:

IO = –4 mA SDO,

DTX:IO = –8 mA

VDDD – 0.6 —

—

V

DOUT: IO = –40 mA

VDDD – 0.8 —

—

V

Low Level Output Voltage

DIO1,DIO2,DOUT,SDITHRU:

VOL

IO = 4 mA

—

SDO,INT,DTX:IO = 8 mA

—

0.4

V

Input Leakage Current

IL

–10

—

10

µA

Table 7. Si321x DC Characteristics, VDDA = VDDD = 3.3 V

(VDDA,VDDD = 3.13 to 3.47 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

High Level Input Voltage

Low Level Input Voltage

High Level Output Voltage

Low Level Output Voltage

Input Leakage Current

VIH

VIL

VOH

VOL

IL

0.7 x VDDD —

—

V

—

— 0.3 x VDDD V

DIO1,DIO2,SDITHRU: IO =–2 mA

SDO, DTX:IO = –4 mA

VDDD – 0.6

—

—

V

DOUT: IO = –40 mA

VDDD – 0.8 —

—

V

DIO1,DIO2,DOUT,SDITHRU:

IO = 2 mA

—

—

0.4

V

SDO,INT,DTX:IO = 4 mA

–10

—

10

µA

Rev. 1.61

11

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