SI3455DV View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SI3455DV Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = -3.6A
8
6
VDS = -5V
-15V
-10V
4
2
0
0
1.4
2.8
4.2
5.6
7
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
SINGLE PULSE
0.1
RθJA = 156oC/W
TA = 25oC
10µs
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
400
f = 1 MHz
CISS
VGS = 0 V
300
200
COSS
100
CRSS
0
0
6
12
18
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
RθJA = 156°C/W
8
TA = 25°C
6
4
2
0
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.01
0.0001
0.02
0.01
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 156oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3455DV Rev A1 (W)
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