SI3455ADV-T1 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI3455ADV-T1 Datasheet PDF : 4 Pages
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P-Channel 30-V (D-S) MOSFET
Si3455ADV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.100 @ VGS = −10 V
−30
0.170 @ VGS = −4.5 V
ID (A)
−3.5
−2.7
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3455ADV-T1
Si3455ADV-T1—E3 (Lead Free)
Marking Code:
A5xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
−30
"20
−3.5
−2.7
−2.8
−2.1
−20
−1.7
−0.95
2.0
1.14
1.3
0.73
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71090
S-40424—Rev. C, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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