SI3451DV-T1-E3(2007) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI3451DV-T1-E3 Datasheet PDF : 7 Pages
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New Product
TYPICAL CHARACTERISTICS 25 °C, unless noted
10
5
VGS = 5 thru 3 V
8
4
VGS = 2.5 V
6
3
Si3451DV
Vishay Siliconix
4
2
0
0
0.30
VGS = 2 V
VGS = 1.5 V
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
0.20
VGS = 2.5 V
0.15
0.10
VGS = 4.5 V
0.05
0.00
0
2
4
6
8
10
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 2.8 A
4
3
VGS = 10 V
VGS = 16 V
2
2
1
0
0.0
500
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
400
300
Ciss
200
100
Crss
Coss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
1.4
VGS = 4.5 V, ID = 2.6 A
1.2
VGS = 2.5 V, ID = 1.9 A
1.0
1
0.8
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73701
S-71597-Rev. B, 30-Jul-07
www.vishay.com
3
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