SI3451DV View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

SI3451DV

P-Channel 20-V (D-S) MOSFET

Vishay Semiconductors 

P-Channel 20-V (D-S) MOSFET

Si3451DV

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

0.115 at VGS = - 4.5 V

- 20

0.205 at VGS = - 2.5 V

ID (A)a

- 2.8

- 2.1

Qg (Typ.)

3.2 nC

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• PWM Optimized

• 100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

TSOP-6

Top View

(4) S

1

6

3 mm

2

5

3

4

2.85 mm

Ordering Information: Si3451DV-T1-E3 (Lead (Pb)-free)

Si3451DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

AD XXX

Lot Traceability

and Date Code

Part # Code

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

- 20

V

VGS

± 12

TC = 25 °C

- 2.8

Continuous Drain Current (TJ = 150 °C)

TC = 70 °C

TA = 25 °C

ID

- 2.3

- 2.6b, c

TA = 70 °C

- 2.1b, c

A

Pulsed Drain Current

IDM

- 10

TC = 25 °C

Continuous Source-Drain Diode Current

TA = 25 °C

IS

- 1.76

- 1.04b, c

TC = 25 °C

2.1

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

PD

1.3

1.25b, c

W

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambientb, d

Maximum Junction-to-Foot (Drain)

t≤5s

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 120 °C/W.

Symbol

RthJA

RthJF

Typical

75

70

Maximum

100

85

Unit

°C/W

Document Number: 73701

S09-2277-Rev. C, 02-Nov-09

www.vishay.com

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