SII100N12 View Datasheet(PDF) - Sirectifier Electronics
Part Name
Description
Manufacturer
SII100N12 Datasheet PDF : 7 Pages
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SII100N12
NPT IGBT Modules
Electeical Characteristics
Symbol
Conditions
Static Characteristics
VGE(th)
ICES
VGE = VCE, IC =4mA
VGE = 0; VCE = 1200V; Tj = 25(125)oC
IGES
VGE = 20V, VCE = 0
VCE(sat) IC =100A; VGE = 15V; Tj = 25(125)oC; chip level
AC Characteristics
Cies under following conditions
Coes VGE = 0, VCE = 25V, f = 1MHz
Cres
gfs
VCE=20V, IC=100A
Switching Characteristics
td(on)
tr
VCC = 600V, IC = 100A
RGon = RGoff =6.8 , Tj = 125oC
td(off)
VGE = ± 15V
tf
FWD under following conditions:
VF
IF = 100A, VGE = 0V, Tj = 25(125)oC
trr
IF=100A, VR=_600V,VGE=0V,di/dt=_1000A/us,Tj = 125oC
Qrr
IF = 100A, VGE = 0V, VR=_ 600V
di/dt=_1000A/us, Tj = 25(125)oC
Mechanical Data
Ms
to heatsink M6
Mt
to terminals M5
w
TC = 25oC, unless otherwise specified
min.
typ.
max.
Units
4.5
5.5
6.5
V
1.5(6)
2
mA
400
nA
2.5(3.1) 3(3.7)
V
6.5
1
nF
0.5
54
S
130
260
80
160
ns
400
600
70
100
2.3(1.8) 2.8
V
0.3
us
4(14)
uC
3
5
Nm
2.5
5
Nm
160
g
SirectifierR
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