Preliminary
SIM300D06AV3
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VBR
IRM
trr
Qrr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Cathode-Anode breakdown Voltage
Maximum Reverse Leakage Current
Reverse Recovery Time
Reverse Recovery Charge
ㅡ
18480
ㅡ
ㅡ
1152
ㅡ
ㅡ
548
ㅡ
ㅡ
115
ㅡ
ㅡ
45
ㅡ
ㅡ
200
ㅡ
ㅡ
45
ㅡ
600
ㅡ
ㅡ
ㅡ
ㅡ
350
ㅡ
120
ㅡ
ㅡ
13.5
ㅡ
VCE = 25V, VGE = 0V
pF
f = 1 MHz
Inductive Switching (125℃)
VCC = 300V
ns
IC = 300A, VGE = ±15V
RG = 3.3Ω
V
㎂
VR = 600V
ns IF = 300A, VR = 300V
µC
di / dt = 3100A /㎲
Thermal Characteristics
Symbol
Parameter
RΘJC
Junction-to-Case (IGBT Part, Per 1/2 Module)
RΘJC
Junction-to-Case (Diode Part, Per 1/2 Module)
RΘCS
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.03
Max
0.13
0.21
-
Unit
℃/W
-2-