SiM3C1xx
Table 3.14. Voltage Reference Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Symbol
Test Condition
Min Typ Max Unit
Internal Fast Settling Reference
Output Voltage
VREFFS
Temperature Coefficient
TCREFFS
Turn-on Time
tREFFS
Power Supply Rejection
PSRRREFFS
On-Chip Precision Reference (VREF0)
–40 to +85 °C,
VDD = 1.8–3.6 V
1.62 1.65 1.68 V
—
50
— ppm/°C
—
—
1.5
µs
—
400
— ppm/V
Valid Supply Range
VDD
VREF2X = 0
1.8
—
3.6
V
VREF2X = 1
2.7
—
3.6
V
Output Voltage
VREFP
25 °C ambient,
VREF2X = 0
1.195 1.2 1.205 V
25 °C ambient,
VREF2X = 1
2.39 2.4 2.41 V
Short-Circuit Current
Temperature Coefficient
Load Regulation
ISC
TCVREFP
LRVREFP
—
—
10 mA
—
25
— ppm/°C
Load = 0 to 200 µA to
—
4.5
— ppm/µA
VREFGND
Load Capacitor
CVREFP
Load = 0 to 200 µA to 0.1
—
—
µF
VREFGND
Turn-on Time
tVREFPON
4.7 µF tantalum, 0.1 µF —
3.8
—
ms
ceramic bypass
0.1 µF ceramic bypass —
200
—
µs
Power Supply Rejection
PSRRVREFP
VREF2X = 0
VREF2X = 1
—
320
— ppm/V
—
560
— ppm/V
External Reference
Input Current
IEXTREF
Sample Rate = 250 ksps; —
5.25 —
µA
VREF = 3.0 V
Rev.1.0
21