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SIM3C134 View Datasheet(PDF) - Silicon Laboratories

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SIM3C134 Datasheet PDF : 90 Pages
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SiM3C1xx
Table 3.14. Voltage Reference Electrical Characteristics
VDD = 1.8 to 3.6 V, 40 to +85 °C unless otherwise specified.
Parameter
Symbol
Test Condition
Min Typ Max Unit
Internal Fast Settling Reference
Output Voltage
VREFFS
Temperature Coefficient
TCREFFS
Turn-on Time
tREFFS
Power Supply Rejection
PSRRREFFS
On-Chip Precision Reference (VREF0)
–40 to +85 °C,
VDD = 1.8–3.6 V
1.62 1.65 1.68 V
50
— ppm/°C
1.5
µs
400
— ppm/V
Valid Supply Range
VDD
VREF2X = 0
1.8
3.6
V
VREF2X = 1
2.7
3.6
V
Output Voltage
VREFP
25 °C ambient,
VREF2X = 0
1.195 1.2 1.205 V
25 °C ambient,
VREF2X = 1
2.39 2.4 2.41 V
Short-Circuit Current
Temperature Coefficient
Load Regulation
ISC
TCVREFP
LRVREFP
10 mA
25
— ppm/°C
Load = 0 to 200 µA to
4.5
— ppm/µA
VREFGND
Load Capacitor
CVREFP
Load = 0 to 200 µA to 0.1
µF
VREFGND
Turn-on Time
tVREFPON
4.7 µF tantalum, 0.1 µF —
3.8
ms
ceramic bypass
0.1 µF ceramic bypass —
200
µs
Power Supply Rejection
PSRRVREFP
VREF2X = 0
VREF2X = 1
320
— ppm/V
560
— ppm/V
External Reference
Input Current
IEXTREF
Sample Rate = 250 ksps; —
5.25 —
µA
VREF = 3.0 V
Rev.1.0
21

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