SIP12503DMP-T1-E3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SIP12503DMP-T1-E3 Datasheet PDF : 11 Pages
| |||
SiP12503
Vishay Siliconix
SPECIFICATIONS
Parameter
Supply Current 1
Supply Current 2
Supply Current 3
Stand-By Current
NMOS Switch Leakage
Symbol
OUT
ISTB
ILEAK
Test Conditions Unless Specified
VIN = 1.2 V, VOUT = Vnome, TA = 25 °C
VOUT = Vnom X 0.95
VOUT = Vnom + 0.5 V, VLX > VIN
VOUT = Vnom + 0.5 V, VLX < VIN
XSHD = 0 V, not including switch leakage
Temp.a
Full
LX = 5 V
Full
Min.b
Limits
Typ.c
330
134
44
1
Max.b
450
1
2
10
Unit
µA
NMOS Switch On Resistance
PWM to PFM Current Threshold
PFM to PWM Current Threshold
RDS(on)
IWTOF
IFTOF
XSHD Input High Level
VXSHDH
XSHD Input Low Level
Softstart Time
Over Voltage Threshold
Over Voltage Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
VXSHDL
tSTART
VOV
VOVHYST
TSHD
THYST
VOUT = 3.3 V
0.8 V ≤ VIN ≤ 0.9 V
0.9 V< VIN ≤ 2 V
2 V < VIN ≤ 5 V
ViN = 1.8 V
0.2
Ω
3
mA
22
Full 0.55
Full
0.8
V
Full
1.2
Full
0.2
1.6
ms
110
%
10
160
°C
20
Notes:
a. Full = - 40 °C to 85 °C.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C).
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Minimum operating voltage is determined by the battery’s capability to provide energy as it is deeply discharged.
e. Vnom equals programmed output voltage.
Document Number: 73579
S09-1454-Rev. B, 03-Aug-09
www.vishay.com
3
Share Link: 