DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SM101 View Datasheet(PDF) - Daesan Electronics Corp.

Part Name
Description
Manufacturer
SM101
DAESAN
Daesan Electronics Corp. DAESAN
SM101 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES SM101 THRU SM107
FIG.1-TYPICAL FORWARDCHARACTERISTICS
50
10
3.0
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.0 1.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GEN ERATO R
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
Single Phase
Half Wave 60Hz
0.4
Resistive Or Inductive Load
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE (o C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT
50
40
30
Tj=25oC
8.3ms Single Half
20
SineWave
JEDEC method
10
01
5
10
50
100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
15
10
5
0
.01
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]