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SM2G54 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
SM2G54 Datasheet PDF : 5 Pages
1 2 3 4 5
SM2G54,SM2L54
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2G54,SM2L54
AC POWER CONTROL APPLICATIONS
Unit: mm
Repetitive Peak Off−State Voltage : VDRM = 800V
R.M.S. On−State Current
: IT (RMS) = 2A
High Commutation (dv / dt)
: (dv / dt) c = 5V / µs (Min.)
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off−State Voltage
R.M.S. On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
800
2
8 (50Hz)
8.8 (60Hz)
0.32
50
3
0.3
10
1.6
−40~125
−40~125
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
Note: di / dt test condition
VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0
1 : T1
2 : T2
3 : GATE
JEDEC
JEITA
TOSHIBA
Weight: 0.82g
1
2004-07-15

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