SMBJ3V3-M3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SMBJ3V3-M3 Datasheet PDF : 4 Pages
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New Product
SMBJ3V3
Vishay General Semiconductor
5500
5000
4500
4000
3500
3000
2500
2000
0
0.5
1
1.5
2
2.5
3 3.5
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
100
TJ = 175 °C
10
TJ = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VF - Forward Voltage Drop (V)
Fig. 7 - Typical Peak Forward Voltage Drop vs. Peak
Forward Current
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
1000
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 89419 For technical questions within your region, please contact one of the following:
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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