LC35W1000BM-10U View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

Manufacturer

LC35W1000BM-10U

Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM

SANYO -> Panasonic 

LC35W1000BM, BTS-70U/10U

DC Allowable Operating Range at Ta = –40 to +85°C

Parameter

Symbol

Supply volgate

VCC

High-level input voltage

VIH

Low-level input voltage

VIL

Note: * The minimum value is –3.0 V for pulse width under 50 ns.

Conditions

Ratings

Unit

min

typ

max

2.7

3.3

3.6

V

0.8VCC

–0.3*

VCC + 0.3

V

0.2VCC

V

DC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V

Parameter

Symbol

Conditions

Input leakage current

I/O leakage current

Outpu high-level voltage

Outpu low-level voltage

Operating supply current

ILI

ILO

VOH1

VOH2

VOL1

VOL2

ICCA2

VIN = 0 to VCC

VCE1 = VIH or VCE2 = VIL or VOE = VIH or

VWE = VIL, VI/O = 0 to VCC

VOH1 = –2.0 mA

VOH2 = –100 µA

VOL1 = 2.0 mA

VOL2 = –100 µA

VCE1 = VIL, VCE2 = VIH, II/O = 0 mA, VIN = VIH or VIL

(CMOS inputs)

ICCA3

VCE1 = VIL, VCE2 = VIH,

II/O = 0 mA, VIN = VIH or VIL,

DUTY100%

min cycle

1 µs cycle

70 ns

100 ns

Standby mode supply current

(VCC – 0.2 V/0.2 V inputs)

(CMOS inputs)

ICCS1

ICCS2

VCE2 ≤ 0.2 V or

(VCE1 ≥ VCC – 0.2 V,

VCE2 ≥ VCC – 0.2 V)

VCE1 = VIH or VCE2 = VIL, VIN = 0 to VCC

Ta ≤ 85°C

Ta ≤ 70°C

Ta ≤ 25°C

Note: * Reference values when VCC = 3.0 V and Ta = 25°C.

min

–1.0

–1.0

VCC – 0.4

VCC – 0.1

2

Ratings

typ

0.1

Unit

max

+1.0

µA

+1.0

µA

V

V

0.4

V

0.1

V

1.2 mA

25

20 mA

20

10

µA

0.4 mA

I/O Capacitances at Ta = 25°C, f = 1 MHz

Parameter

Symbol

Conditions

Input capacitance

I/O capacitance

CIN

CI/O

VIN = 0 V

VI/O = 0 V

Note: These parameters are not measured for all devices, but are sampled values.

Ratings

Unit

min

typ

max

6

10

pF

6

10

pF

No. 6624-4/9

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