03N60C3 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

03N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPP03N60C3, SPB03N60C3

SPA03N60C3

17 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=3.2A

90

V/ns

18 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=20Ω

0.01

*) Eon includes SDP06S60

mWs diode commutation losses.

70

60

50

40

dv/dt(on)

30

20

dv/dt(off)

10

0.008

0.007

0.006

0.005

0.004

0.003

0.002

0.001

Eon*

Eoff

0

0 20 40 60 80 100 120 140 160 Ω 200

RG

0

0 0.5 1 1.5 2 2.5 A 3.5

ID

19 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=3.2A

0.06

*) Eon includes SDP06S60

mWs diode commutation losses.

0.048

Eoff

0.042

20 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

3.5

A

2.5

Tj(START)=25°C

0.036

0.03

0.024

Eon*

2

1.5 Tj(START)=125°C

0.018

1

0.012

0.5

0.006

0

0

40

80

120

160 Ω 220

RG

Page 9

0

10

-3

10 -2

10 -1

10 0

10 1

10 2

µs 10 4

tAR

2003-10-02

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