SD1530-01 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

SD1530-01

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

STMicroelectronics 

SD1530-01

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

. DESIGNED FOR HIGH POWER PULSED

IFF, DME, TACAN APPLICATIONS

. 40 WATTS (typ.) IFF 1030 - 1090 MHz

. 35 WATTS (min.) DME 1025 - 1150 MHz

. 25 WATTS (typ.) TACAN 960 - 1215 MHz

. 9.0 dB MIN. GAIN

. REFRACTORY GOLD METALLIZATION

. EMITTER BALLASTING AND LOW

THERMAL RESISTANCE FOR

RELIABILITY AND RUGGEDNESS

. INFINITE LOAD VSWR CAPABILITY AT

SPECIFIED OPERATING CONDITIONS

. INPUT MATCHED, COMMON BASE

CONFIGURATION

.280 4LSL (M115)

epoxy sealed

ORDER CODE

B RA ND IN G

SD1530-01

1530-1

PIN CONNECTION

DESCRIPTION

The SD1530-01 is a gold metallized silicon, NPN

power transistor designed for applications requiring

high peak power and low duty cycles such as

IFF, DME and TACAN. The SD1530-01 is pack-

aged in the .280” input matched stripline package

resulting in improved broadband performance and

a low thermal resistance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

Parameter

VCBO

Collector-Base Voltage

VCES

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Device Current

PDISS

Power Dissipation

TJ

TSTG

Junction Temperature

Storage Temperature

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance

October 11, 1993

1. Collector

2. Base

3. Emitter

4. Base

Value

Unit

65

V

65

V

3.5

V

2.6

A

87.5

W

+200

°C

− 65 to +150

°C

2.0

°C/W

rev. 1 1/3

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