SPU28N03L View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

SPU28N03L

SIPMOS® Power Transistor

Siemens AG 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area2)

SPD28N03L

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

RthJA

-

-

2 K/W

-

- 100

-

-

75

-

-

50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA

Gate threshold voltage, VGS = VDS

ID = 50 µA

Zero gate voltage drain current

VDS = 30 V, VGS = 0 V, Tj = 25 °C

VDS = 30 V, VGS = 0 V, Tj = 150 °C

V(BR)DSS 30

-

-V

VGS(th)

1.2

1.6

2

I DSS

µA

-

- 100

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 4.5 V, ID = 28

VGS = 10 V, ID = 28 A

I GSS

RDS(on)

-

10 100 nA

Ω

- 0.023 0.028

- 0.013 0.018

1current limited by bond wire

2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

Semiconductor Group

2

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