SSD2009A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SSD2009A Datasheet PDF : 5 Pages
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SSD2009A
Dual N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
BVDSS
VGS(th)
IGSS
IDSS
IDON
RDS(on)
gfs
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
On-State Drain-Source Current
Static Drain-Source
On-State Resistance
②
Forward Transconductance ②
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Min. Typ. Max. Units
Test Condition
50 -- -- V VGS=0V,ID=250μA
1.0 -- 3.0 V VDS= 5V ,ID=250μA
-- -- 100 nA VGS=20V
-- -- -100 nA VGS=-20V
--
--
--
--
2.0
25
μA
VDS=40V
VDS=40V,TC=55℃
10 -- -- A
-- 0.065 0.13 Ω
-- 0.084 0.2
-- 7.0 -- S
-- 16 20
VDS=5V ,VGS=10V
VGS=10V,ID=3.0A
VGS=4.5V,ID=1.5A
VDS =15V,ID=3.0A
-- 16 20 ns VDD=25V,ID=1.0A,
-- 40 70
R0=6.0Ω,
-- 23 50
②③
-- 17 25
-- 1.8 --
-- 3.9 --
VDS=25V,VGS=10V,
nC ID=2.0A
②③
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
Continuous Source Current
Modified MOSFET Symbol
○D
IS (Body Diode)
--
--
2.0
A
Showing the Integral Reverse
P-N Junction Rectifier
─ ││ ○
││
┘ │─ ─ │ ││ │◀─│▲──
│ G
○S
VSD Diode Forward Voltage ② -- -- 1.2 V TA=25℃,IS=1.5A,VGS=0V
trr Reverse Recovery Time ② -- 100 -- ns TA=25℃,IF=1.5A,diF/dt=100A/μs
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operating Temperature
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